![]() Diamond Semiconductor Devices: State-of-the-Art of Material Growth and Device ProcessingĪmong the non-power-related technical highlights of IEDM 2020 are:.4 5 kV Multi-Channel AlGaN/GaN Power Schottky Barrier Diodes with Junction-Fin-Anode.3.3 kV Back-Gate-Controlled IGBT (BC-IGBT) Using Manufacturable Double-Side Process Technology.Development of High-Voltage Vertical GaN PN Diodes.Other power-related topics covered in Plenary Session 5 include: They will also explain why their data indicates that devices based on a vacuum drift region can outperform semiconductors for high frequency and power applications. It will include " Demonstration of a ~40 kV Si Vacuum Transistor as a Practical High Frequency and Power Device," where the authors provide details on how they fabricated the first silicon-based vacuum transistor capable of operating with ~40-kV applied bias. One of the highlights of this year's IEDM program will be Plenary Session 5, titled " Power Devices and Systems - Recent Advances in Power Electronic Devices,” held on Monday, Dec. Visitors will also be able to participate in the live-streamed events, such as the plenary presentations, panel discussion, and career session. IEDM will offer its online attendees a rich program of tutorials, short courses, and a technical program with over 220 papers. The event will offer a mix of live-streamed events and on-demand pre-recorded presentations, with a schedule of live Q&A sessions. ![]() What the Heck are Silicon Vacuum Tubes? Find Out at IEEE's Virtual IEDMĭiamond-based transistors, silicon vacuum devices, and other advanced power technologies will constitute one of several prominently featured areas of exploration at the 66 th annual edition of the IEEE International Electron Devices Meeting (IEDM), held as a virtual event this year from Saturday through Friday, December 12-18, 2020. ![]()
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